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? ? ? ? ? ? ? fuji power mosfet superfap-g series target specification prelim inary 1) package to-220f15r 2) absolute maximum ratings (tc=25 ???@ unless otherwise specified) items units drain-source voltage v continuous drain current a pulsed drain current a gate-source voltage v repetitive and non-repetitive maximum avalanche current a non-repetitive maximum avalanche energy mj *1 maximum drain-source dv/dt dv ds /dt kv/us peak diode recovery dv/dt dv/dt kv/us *2 w w operating and storage ? temperature range ? 3)electrical characteristics (tch=25 ?? unless otherwise specified) items symbols test conditions min. typ. max. units drain-source breakdown voltage bv dss i d =250ua v gs =0v 500 --- --- v gate threshold voltage v gs (th) i d =250ua v ds =v gs 3.0 --- 5.0 v v ds =500v t ch =25 ? --- --- 25 ? a v gs =0v t ch =125 ? --- --- 250 ? a gate-source leakage current i gss v gs =30v v ds =0v --- --- 100 ? a input capacitance c iss v ds =25v --- 1580 2370 output capacitance c oss v gs =0v --- 240 360 pf reverse transfer capacitance c rss f=1mhz --- 12 18 total gate charge qg vcc=250v --- 32 48 gate to source charge qgs i d =19a --- 16 24 nc gate to drain (miller) charge qgd v gs =10v --- 12 18 avalanche capability i av l=1.25mh tch=25 ? 19 --- --- a diode forward on-voltage v sd i f =19a,vgs=0v,tch=25 ?? --- 1.0 1.5 v 4) thermal characteristics items symbols test conditions min. typ. max. units channel to case rth(ch-c) 1.316 ? /w channel to ambient rth(ch-a) 58.0 ? /w *1 l=1.25mh,vcc=50v *2 i f -i d ,-di/dt=50a/ s,vcc bv dss ,tch 150 c 2sK3683-01mr (500v/0.38 ? /19a) v gs i ar e as symbols v ds i d i d(pulse) 30 19 maximum power dissipation p d @ta=25 ?? p d ?@???s c=25 ?? t ch t stg 95 2.16 150 -55 ?` +150 ratings 500 19 76 ?? --- 0.38 245.3 20 5 zero gate voltage drain current drain-source on-state resistance vgs=10v --- i dss r ds (on) i d =9.5a ,7 ? ? ? ? ,7 ? ? ? ?
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